BC856SE6433XT详情
Infineon BC856SE6433XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.75
Automotive
有
PPAP
Unknown
Category
双极小信号
Number of Elements per Chip
2
Maximum Collector Base Voltage (V)
80
Maximum Collector-Emitter Voltage (V)
65
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)
[email protected]@10mA|0.65@5mA@100mA
Maximum DC Collector Current (A)
0.1
Minimum DC Current Gain
200@2mA@5V
Maximum Power Dissipation (mW)
250
Maximum Transition Frequency (MHz)
250(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
0.9(Max)
Package Width
1.25
Package Length
2
PCB changed
6
Standard Package Name
SOT
Supplier Package
SOT-363
Lead Shape
Gull-wing
包装
卷带
零件状态
Unconfirmed
类型
PNP
引脚数量
6
配置
Dual
BC856SE6433XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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