BCP5616E6433XT详情
Infineon BCP5616E6433XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
4
材料
Si
PPAP
Unknown
Category
双极电源
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
100
Maximum Collector-Emitter Voltage (V)
80
Maximum Emitter Base Voltage (V)
5
Operating Junction Temperature (°C)
150
Maximum Collector-Emitter Saturation Voltage (V)
0.5@50mA@500mA
Maximum DC Collector Current (A)
1
Maximum Collector Cut-Off Current (nA)
100
Minimum DC Current Gain
25@5mA@2V|100@150mA@2V|25@500mA@2V
Maximum Power Dissipation (mW)
2000
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
1.6
Package Width
3.5
Package Length
6.5
PCB changed
3
Tab
Tab
Supplier Package
SOT-223
Automotive
有
HTS
8541.29.00.75
ECCN (US)
EAR99
EU RoHS
Compliant
包装
卷带
零件状态
Obsolete
类型
NPN
配置
单双集电极
BCP5616E6433XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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