BCV26E6327T详情
Infineon BCV26E6327T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
表面贴装
引脚数
3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.75
Automotive
有
PPAP
Unknown
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
30
Maximum Collector Base Voltage (V)
40
Maximum Emitter Base Voltage (V)
10
Maximum Base Emitter Saturation Voltage (V)
[email protected]@100mA
Maximum Continuous DC Collector Current (A)
0.5
Maximum Collector Cut-Off Current (uA)
0.1
Typical Current Gain Bandwidth (MHz)
200
Maximum Collector-Emitter Saturation Voltage (V)
[email protected]@100mA
Minimum DC Current Gain
[email protected]@1V|10000@10mA@5V|20000@100mA@5V|[email protected]@5V
Maximum Power Dissipation (mW)
360
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
Collector-Emitter Saturation Voltage
1 V
Number of Elements
1
RoHS
Compliant
包装
卷带
零件状态
Unconfirmed
类型
PNP
最高工作温度
150 °C
最小工作温度
-65 °C
引脚数量
3
极性
PNP
配置
Single
集电极发射器电压(VCEO)
30 V
集电极基极电压(VCBO)
40 V
发射极基极电压 (VEBO)
10 V
BCV26E6327T拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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