BCW68HE6327T详情
Infineon BCW68HE6327T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
3
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
有
PPAP
Unknown
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
60
Maximum Collector-Emitter Voltage (V)
45
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
2@50mA@500mA|1.25@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)
0.7@50mA@500mA|0.3@10mA@100mA
Maximum DC Collector Current (A)
0.8
Minimum DC Current Gain
100@500mA@2V|250@100mA@1V|180@10mA@1V|80@100uA@10V
Maximum Power Dissipation (mW)
330
Maximum Transition Frequency (MHz)
200(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
汽车
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
包装
卷带
零件状态
Unconfirmed
类型
PNP
配置
Single
BCW68HE6327T拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。