BSS79CE6433XT详情
Infineon BSS79CE6433XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
无
PPAP
无
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
75
Maximum Collector-Emitter Voltage (V)
40
Maximum Emitter Base Voltage (V)
6
Maximum Base Emitter Saturation Voltage (V)
1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)
0.3@15mA@150mA|1.3@50mA@500mA
Maximum DC Collector Current (A)
0.8
Minimum DC Current Gain
35@100uA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V
Maximum Power Dissipation (mW)
330
Maximum Transition Frequency (MHz)
250(Typ)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
包装
卷带
零件状态
Obsolete
类型
NPN
配置
Single
BSS79CE6433XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。