Infineon IGW30N100T

包装/外壳

TO-247-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Operating Temperature (Max.)

175C

Operating Temperature Classification

Military

Package Type

TO-247

Collector Current (DC)

60(A)

Rad Hardened

无

Collector-Emitter Voltage

1000(V)

Operating Temperature (Min.)

-55C

Gate to Emitter Voltage (Max)

±20(V)

Mounting

通孔

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Pd - Power Dissipation

412 W

Maximum Operating Temperature

+ 175 C

Collector-Emitter Saturation Voltage

1.55 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Continuous Collector Current at 25 C

60 A

Mounting Styles

通孔

Part # Aliases

IGW3N1TXK SP000380845 IGW30N100TFKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Continuous Collector Current Ic Max

30 A

Tradename

TRENCHSTOP

RoHS

Details

Collector- Emitter Voltage VCEO Max

1 kV

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Turn-on Time-Nom (ton)

54 ns

Turn-off Time-Nom (toff)

569 ns

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

IGW30N100T

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Obsolete

Samacsys Description

IGBT 1000V, 60A,TO-247-3

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

8.57

Part Package Code

TO-247AD

包装

Rail/Tube

系列

TRENCHSTOP IGBT

无铅代码

有

ECCN 代码

EAR99

子类别

IGBTs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3 +Tab

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

Single

晶体管应用

电源控制

极性/通道类型

N-CHANNEL

产品类别

IGBT晶体管

JEDEC-95代码

TO-247AD

信道型

N

最大耗散功率(Abs)

412 W

集电极电流-最大值(IC)

60 A

集电极-发射器电压-最大值

1000 V

栅极-发射极电压-最大值

20 V

栅极-发射极Thr电压-最大值

6.4 V

产品类别

IGBT晶体管