Infineon PTF080901EV1X

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.75

Automotive

无

PPAP

无

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

12

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

100(Typ)@10V

Maximum Power Dissipation (mW)

335000

Output Power (W)

90

Typical Power Gain (dB)

18

Maximum Frequency (MHz)

960

Minimum Frequency (MHz)

869

Typical Drain Efficiency (%)

42

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

200

Mounting

Screw

Package Height

3.61

Package Width

9.78

Package Length

34.04

PCB changed

3

Supplier Package

Case 30248

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

EDGE|2-Tone