PTFA043002EV1XWSA1详情
Infineon PTFA043002EV1XWSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.29.00.75
Channel Mode
Enhancement
Number of Elements per Chip
2
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
65
Maximum Gate Source Voltage (V)
12
Maximum VSWR
5
Maximum Drain Source Resistance (MOhm)
80(Typ)@10V
Maximum Power Dissipation (mW)
761000
Output Power (W)
300
Typical Power Gain (dB)
17.5
Maximum Frequency (MHz)
860
Minimum Frequency (MHz)
470
Typical Drain Efficiency (%)
41
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
200
包装
Wafer
零件状态
Obsolete
配置
双共源
信道型
N
操作方式
2-Tone|ATSC 8VSB
PTFA043002EV1XWSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。