Infineon PTFA043002EV1XWSA1

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

12

Maximum VSWR

5

Maximum Drain Source Resistance (MOhm)

80(Typ)@10V

Maximum Power Dissipation (mW)

761000

Output Power (W)

300

Typical Power Gain (dB)

17.5

Maximum Frequency (MHz)

860

Minimum Frequency (MHz)

470

Typical Drain Efficiency (%)

41

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

200

包装

Wafer

零件状态

Obsolete

配置

双共源

信道型

N

操作方式

2-Tone|ATSC 8VSB