SMBTA13E6327XT详情
Infineon SMBTA13E6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.75
Automotive
无
PPAP
无
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
30
Maximum Collector Base Voltage (V)
30
Maximum Emitter Base Voltage (V)
10
Maximum Base Emitter Saturation Voltage (V)
[email protected]@100mA
Maximum Continuous DC Collector Current (A)
0.3
Maximum Collector Cut-Off Current (uA)
0.1
Typical Current Gain Bandwidth (MHz)
125(Min)
Maximum Collector-Emitter Saturation Voltage (V)
[email protected]@100mA
Minimum DC Current Gain
10000@100mA@5V|5000@10mA@5V
Maximum Power Dissipation (mW)
330
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
类型
NPN
配置
Single
SMBTA13E6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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