Infineon SMBTA92E6327T

材料

Si

ECCN (US)

EAR99

HTS

8541.21.00.75

Automotive

有

PPAP

Unknown

Category

双极小信号

Number of Elements per Chip

1

Maximum Collector Base Voltage (V)

300

Maximum Collector-Emitter Voltage (V)

300

Maximum Emitter Base Voltage (V)

5

Operating Junction Temperature (°C)

150

Maximum Base Emitter Saturation Voltage (V)

0.9@2mA@20mA

Maximum Collector-Emitter Saturation Voltage (V)

0.5@2mA@20mA

Maximum DC Collector Current (A)

0.5

Maximum Collector Cut-Off Current (nA)

250

Minimum DC Current Gain

25@1mA@10V|40@10mA@10V|25@30mA@10V

Maximum Power Dissipation (mW)

360

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Unconfirmed

类型

PNP

配置

Single