Infineon Technologies AIGW50N65H5
- 收藏
- 对比
AIGW50N65H5
1211-AIGW50N65H5
晶体管 - IGBT - 单个
--
大陆
立即发货

270W 83A 650V TO-247-3-41 IGBT Transistors / Modules ROHS
1最小包装量--
AIGW50N65H5详情
Infineon Technologies AIGW50N65H5重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Power Dissipation (Pd)
270W
Turn?off Delay Time (Td(off))
173ns
Turn?on Delay Time (Td(on))
21ns
Collector Current (Ic)
83A
Collector-Emitter Breakdown Voltage (Vces)
650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4V@500uA
Total Gate Charge (Qg@Ic,Vge)
116nC@50A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
1.66V@50A,15V
Turn?off Switching Loss (Eoff)
0.16mJ
Turn?on Switching Loss (Eon)
0.45mJ
Input Capacitance (Cies@Vce)
2.8nF@25V
Package
Tube-packed
操作温度
-40℃~+175℃@(Tj)
AIGW50N65H5拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。