Infineon Technologies IGLR65R140D2XUMA1

包装/外壳

PG-TSON-8

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

13 A

Rds On - Drain-Source Resistance

170 mOhms

Vgs - Gate-Source Voltage

- 10 V

Vgs th - Gate-Source Threshold Voltage

1.6 V

Qg - Gate Charge

2.6 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

46 W

Channel Mode

Enhancement

Fall Time

28 ns

Moisture Sensitive

有

Typical Turn-Off Delay Time

13 ns

Typical Turn-On Delay Time

10 ns

Vgs - Gate-Source Breakdown Voltage

650 V

类型

GaN Transistor

配置

Single

通道数量

1 Channel

上升时间

6.2 ns

晶体管类型

1 N-Channel

产品

Power Transistors