Infineon Technologies IGLT65R025D2AUMA1

包装/外壳

PG-HDSOP-16

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

67 A

Rds On - Drain-Source Resistance

30 mOhms

Vgs - Gate-Source Voltage

- 10 V

Vgs th - Gate-Source Threshold Voltage

1.6 V

Qg - Gate Charge

16 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

219 W

Channel Mode

Enhancement

类型

GaN Transistor

配置

Single

通道数量

1 Channel

晶体管类型

N-Channel

产品

Power Transistors