Infineon Technologies IKW25N120H3XK

工厂交货时间

20 Weeks

包装/外壳

TO-247-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Collector- Emitter Voltage VCEO Max

1.2 kV

Collector-Emitter Saturation Voltage

2.05 V

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Continuous Collector Current at 25 C

50 A

Pd - Power Dissipation

326 W

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 175 C

Gate-Emitter Leakage Current

600 nA

Factory Pack QuantityFactory Pack Quantity

240

Tradename

TRENCHSTOP

Part # Aliases

SP000674418 IKW25N120H3 IKW25N120H3FKSA1

Unit Weight

0.211644 oz

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Turn-on Time-Nom (ton)

61 ns

Turn-off Time-Nom (toff)

397 ns

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Risk Rank

2.28

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Life Cycle Code

活跃

Number of Elements

1

Package Shape

RECTANGULAR

Manufacturer Part Number

IKW25N120H3XK

Rohs Code

有

系列

Trenchstop IGBT4

包装

Tube

ECCN 代码

EAR99

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

R-PSFM-T3

配置

Single

晶体管应用

电源控制

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-247

集电极电流-最大值(IC)

50 A

连续集电极电流

50

集电极-发射器电压-最大值

1200 V