Infineon Technologies AG BSM10GD100D
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BSM10GD100D
1211-BSM10GD100D
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 10A I(C), 1000V V(BR)CES
1最小包装量--
BSM10GD100D详情
Infineon Technologies AG BSM10GD100D重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
,
Number of Elements
1
ECCN 代码
EAR99
Reach合规守则
compliant
最大耗散功率(Abs)
50 W
集电极电流-最大值(IC)
10 A
集电极-发射器电压-最大值
1000 V
VCEsat-最大值
2.8 V
BSM10GD100D拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。