Infineon Technologies AG BSM200GA120DL
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BSM200GA120DL
1211-BSM200GA120DL
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES,
1最小包装量--
BSM200GA120DL详情
Infineon Technologies AG BSM200GA120DL重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
,
Number of Elements
1
Operating Temperature-Max
150 °C
ECCN 代码
EAR99
Reach合规守则
compliant
最大耗散功率(Abs)
1400 W
集电极电流-最大值(IC)
360 A
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2.6 V
BSM200GA120DL拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。