Infineon Technologies AG FS150R12N2T7
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FS150R12N2T7
1211-FS150R12N2T7
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-32
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FS150R12N2T7详情
Infineon Technologies AG FS150R12N2T7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
NO
Number of pins
42
终端数量
32
晶体管元件材料
SILICON
外壳材料
6
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
1x42
Gross weight
3.61 g
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
MODULE-32
Operating Temperature-Max
175 °C
Operating Temperature-Min
-40 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
436 ns
Turn-on Time-Nom (ton)
222 ns
Operating temperature
-40...163°C
ECCN 代码
EAR99
附加功能
UL 认证
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
compliant
Current rating
1.5A
参考标准
IEC-60747; IEC-60749; IEC-60068; IEC-61140
JESD-30代码
R-XUFM-X32
配置
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
箱体转运
ISOLATED
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
150 A
Rated voltage
60V
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
1.8 V
栅极-发射极Thr电压-最大值
6.45 V
个人资料
beryllium copper
Plating thickness
0.75µm
Flammability rating
UL94V-0
FS150R12N2T7拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
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Infineon Technologies
Infineon Technologies
Infineon Technologies
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