Infineon Technologies AG IKW25N120CS7
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IKW25N120CS7
1211-IKW25N120CS7
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247,
1最小包装量--
IKW25N120CS7详情
Infineon Technologies AG IKW25N120CS7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
NO
Number of pins
16
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
2x8
Row pitch
2.54mm
Gross weight
0.96 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Operating Temperature-Max
175 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
260 ns
Turn-on Time-Nom (ton)
34 ns
Operating temperature
-40...163°C
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
compliant
Current rating
1.5A
JESD-30代码
R-PSFM-T3
配置
SINGLE WITH BUILT-IN DIODE
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247
最大耗散功率(Abs)
250 W
集电极电流-最大值(IC)
55 A
Rated voltage
60V
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
VCEsat-最大值
2 V
栅极-发射极Thr电压-最大值
6.45 V
个人资料
beryllium copper
Plating thickness
0.75µm
Flammability rating
UL94V-0
IKW25N120CS7拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







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