Infineon Technologies AG PTFA240451EV1X

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

12

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

170(Typ)@10V

Maximum Power Dissipation (mW)

196000

Output Power (W)

45

Typical Power Gain (dB)

14

Maximum Frequency (MHz)

2480

Minimum Frequency (MHz)

2420

Typical Drain Efficiency (%)

40

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

200

Supplier Package

Case 30265

Military

无

Mounting

Screw

Package Height

3.48

Package Length

20.31

Package Width

10.16

PCB changed

3

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N

操作方式

CW|3-Carrier CDMA2000|2-Tone|WIMAX|2-Carrier CDMA

RoHS状态

符合RoHS标准