IXYS Integrated Circuits Division / Littelfuse IXFM12N100

材料

Si

EU RoHS

Compliant

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HDMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (MOhm)

1050@10V

Typical Gate Charge @ Vgs (nC)

122@10V

Typical Gate Charge @ 10V (nC)

122

Typical Input Capacitance @ Vds (pF)

4000@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

32

Typical Rise Time (ns)

33

Typical Turn-Off Delay Time (ns)

62

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

11.4(Max)

Package Width

26.66

Package Length

30.15 + 9.54(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-204AA

RoHS

Compliant

Turn Off Delay Time

62 ns

零件状态

Obsolete

最高工作温度

150 °C

最小工作温度

-55 °C

引脚数量

3

配置

Single

元素配置

Single

功率耗散

300 W

上升时间

33 ns

连续放电电流(ID)

12 A

栅极至源极电压(Vgs)

20 V

漏源击穿电压

1 kV

信道型

N

漏源电阻

1.05 Ω