Jilin Sino-Microelectronics JT015N065FED
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JT015N065FED
1604-JT015N065FED
晶体管 - IGBT - 单个
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31W 30A 650V TO-220MF IGBT Transistors / Modules ROHS
1最小包装量--
JT015N065FED详情
Jilin Sino-Microelectronics JT015N065FED重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Power Dissipation (Pd)
31W
Collector Current (Ic)
30A
Collector-Emitter Breakdown Voltage (Vces)
650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
6.5V@250uA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
1.6V@15A,15V
Input Capacitance (Cies@Vce)
880pF@25V
Diode Forward Voltage (Vf@If)
1.4V@15A
Package
Tube-packed
操作温度
-55℃~+150℃@(Tj)
JT015N065FED拓展信息
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Hangzhou Silan Microelectronics
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation








哦! 它是空的。