参数名
参数值
参数名
参数值
包装/外壳
ISOPLUS-i4-PAK-5
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
CoolMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
600
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
47
Maximum Drain Source Resistance (MOhm)
45@10V
Typical Gate Charge @ Vgs (nC)
150@10V
Typical Gate Charge @ 10V (nC)
150
Typical Input Capacitance @ Vds (pF)
6800@100V
Typical Fall Time (ns)
10
Typical Rise Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
20.88
Package Width
5.03
Package Length
19.91
PCB changed
5
Tab
Tab
Supplier Package
ISOPLUS I4
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
3 V
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
150 nC
Rds On - Drain-Source Resistance
45 mOhms
Id - Continuous Drain Current
47 A
零件状态
活跃
技术
Si
引脚数量
5
配置
Single
通道数量
1 Channel
信道型
N