Littelfuse FMM75-01F

包装/外壳

ISOPLUS-i4-PAK-5

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

75

Maximum Drain Source Resistance (MOhm)

25@10V

Typical Gate Charge @ Vgs (nC)

180@10V

Typical Gate Charge @ 10V (nC)

180

Typical Fall Time (ns)

60

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

20.88

Package Width

5.03

Package Length

19.91

PCB changed

5

Tab

Tab

Standard Package Name

ISOPLUS I4-PAC

Supplier Package

ISOPLUS I4-PAC

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

-

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 125 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

180 nC

Rds On - Drain-Source Resistance

25 mOhms

Id - Continuous Drain Current

75 A

技术

Si

引脚数量

5

配置

Dual

通道数量

2 Channel

信道型

N