Littelfuse IXFA130N10T2-TRL

包装/外壳

TO-263-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

130

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

10.1@10V

Typical Gate Charge @ Vgs (nC)

130@10V

Typical Gate Charge @ 10V (nC)

130

Typical Input Capacitance @ Vds (pF)

6600@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

38

Typical Turn-Off Delay Time (ns)

24

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

360 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

130 nC

Rds On - Drain-Source Resistance

10.1 mOhms

Id - Continuous Drain Current

130 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N