Littelfuse IXFA20N85XHV-TRL

包装/外壳

TO-263-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

850

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5.5

Maximum Continuous Drain Current (A)

20

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

330@10V

Typical Gate Charge @ Vgs (nC)

63@10V

Typical Gate Charge @ 10V (nC)

63

Typical Input Capacitance @ Vds (pF)

1660@25V

Maximum Power Dissipation (mW)

540000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

28

Typical Turn-Off Delay Time (ns)

44

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.7(Max)

Package Width

9.4(Max)

Package Length

10.2(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-263HV

Vds - Drain-Source Breakdown Voltage

850 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

540 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

63 nC

Rds On - Drain-Source Resistance

330 mOhms

Id - Continuous Drain Current

20 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N