Littelfuse IXFB100N50P

包装/外壳

PLUS-264-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

100

Maximum Drain Source Resistance (MOhm)

49@10V

Typical Gate Charge @ Vgs (nC)

240@10V

Typical Gate Charge @ 10V (nC)

240

Typical Input Capacitance @ Vds (pF)

20000@25V

Maximum Power Dissipation (mW)

1890000

Typical Fall Time (ns)

26

Typical Rise Time (ns)

29

Typical Turn-Off Delay Time (ns)

110

Typical Turn-On Delay Time (ns)

36

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 264

MSL

-

Qualification

-

Continuous Drain Current Id

100A

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

1.25 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

240 nC

Rds On - Drain-Source Resistance

49 mOhms

Id - Continuous Drain Current

100 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

1.89kW

信道型

N