Littelfuse IXFB38N100Q2

包装/外壳

PLUS-264-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

38

Maximum Drain Source Resistance (MOhm)

250@10V

Typical Gate Charge @ Vgs (nC)

250@10V

Typical Gate Charge @ 10V (nC)

250

Typical Input Capacitance @ Vds (pF)

7200@25V

Maximum Power Dissipation (mW)

890000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

28

Typical Turn-Off Delay Time (ns)

57

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

Continuous Drain Current

38(A)

Drain-Source On-Volt

1000(V)

Operating Temperature Classification

Military

Package Type

PLUS 264

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

1 kV

Pd - Power Dissipation

890 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

280 mOhms

Id - Continuous Drain Current

38 A

系列

IXFB38N100

零件状态

NRND

类型

功率MOSFET

技术

Si

引脚数量

3

极性

N

配置

Single

通道数量

1 Channel

功率耗散

890(W)

信道型

N