Littelfuse IXFB62N80Q3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

6.5

Maximum Continuous Drain Current (A)

62

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

140@10V

Typical Gate Charge @ Vgs (nC)

270@10V

Typical Gate Charge @ 10V (nC)

270

Typical Input Capacitance @ Vds (pF)

13600@25V

Maximum Power Dissipation (mW)

1560000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

62

Typical Turn-On Delay Time (ns)

54

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N