Littelfuse IXFB82N60P

包装/外壳

PLUS-264-3

EU RoHS

符合免除

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

82

Maximum Drain Source Resistance (MOhm)

75@10V

Typical Gate Charge @ Vgs (nC)

240@10V

Typical Gate Charge @ 10V (nC)

240

Typical Input Capacitance @ Vds (pF)

23000@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

24

Typical Rise Time (ns)

23

Typical Turn-Off Delay Time (ns)

79

Typical Turn-On Delay Time (ns)

28

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

Id - Continuous Drain Current

82 A

Rds On - Drain-Source Resistance

75 mOhms

Qg - Gate Charge

240 nC

Mounting Styles

通孔

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

1.25 kW

Vgs th - Gate-Source Threshold Voltage

5 V

Vds - Drain-Source Breakdown Voltage

600 V

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N