参数名
参数值
参数名
参数值
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
PolarHV
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
800
Maximum Gate Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
16
Maximum Drain Source Resistance (mOhm)
600@10V
Typical Gate Charge @ Vgs (nC)
71@10V
Typical Gate Charge @ 10V (nC)
71
Typical Input Capacitance @ Vds (pF)
4600@25V
Maximum Power Dissipation (mW)
460000
Typical Fall Time (ns)
29
Typical Rise Time (ns)
32
Typical Turn-Off Delay Time (ns)
75
Typical Turn-On Delay Time (ns)
27
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247AD
Continuous Drain Current
16(A)
Drain-Source On-Volt
800(V)
Operating Temperature Classification
Military
Package Type
TO-247AD
Operating Temp Range
-55C to 150C
Gate-Source Voltage (Max)
±30(V)
Number of Elements
1
Rad Hardened
无
零件状态
活跃
类型
功率MOSFET
引脚数量
3
极性
N
配置
Single
功率耗散
460(W)
信道型
N