参数名
参数值
参数名
参数值
包装/外壳
TO-247-3
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
220
Maximum Drain Source Resistance (MOhm)
6.2@10V
Typical Gate Charge @ Vgs (nC)
204@10V
Typical Gate Charge @ 10V (nC)
204
Typical Input Capacitance @ Vds (pF)
13600@25V
Maximum Power Dissipation (mW)
890000
Typical Fall Time (ns)
17
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
155
Typical Turn-On Delay Time (ns)
37
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
21.34(Max)
Package Width
5.21(Max)
Package Length
16.13(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247
MSL
-
Qualification
-
Continuous Drain Current Id
220A
Id - Continuous Drain Current
220 A
Rds On - Drain-Source Resistance
6.2 mOhms
Qg - Gate Charge
204 nC
Mounting Styles
通孔
Minimum Operating Temperature
- 55 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Maximum Operating Temperature
+ 150 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
890 W
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vds - Drain-Source Breakdown Voltage
200 V
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
功率耗散
890W
信道型
N