Littelfuse IXFK180N15P

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

180

Maximum Drain Source Resistance (mOhm)

11@10V

Typical Gate Charge @ Vgs (nC)

240@10V

Typical Gate Charge @ 10V (nC)

240

Typical Input Capacitance @ Vds (pF)

7000@25V

Maximum Power Dissipation (mW)

830000

Typical Fall Time (ns)

36

Typical Rise Time (ns)

32

Typical Turn-Off Delay Time (ns)

150

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264AA

Continuous Drain Current

180(A)

Drain-Source On-Volt

150(V)

Operating Temperature Classification

Military

Package Type

TO-264AA

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

830(W)

信道型

N