参数名
参数值
参数名
参数值
包装/外壳
TO-264-3
EU RoHS
符合免除
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
GigaMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
150
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
240
Maximum Drain Source Resistance (MOhm)
5.2@10V
Typical Gate Charge @ Vgs (nC)
460@10V
Typical Gate Charge @ 10V (nC)
460
Typical Input Capacitance @ Vds (pF)
32000@25V
Maximum Power Dissipation (mW)
1250000
Typical Fall Time (ns)
145
Typical Rise Time (ns)
125
Typical Turn-Off Delay Time (ns)
77
Typical Turn-On Delay Time (ns)
48
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
通孔
Package Height
26.16(Max)
Package Width
5.13(Max)
Package Length
19.96(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-264
Vds - Drain-Source Breakdown Voltage
150 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
1.25 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
460 nC
Rds On - Drain-Source Resistance
5.2 mOhms
Id - Continuous Drain Current
240 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N