参数名
参数值
参数名
参数值
包装/外壳
TO-264-3
ECCN (US)
EAR99
HTS
8541.29.00.95
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
250
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
240
Maximum Drain Source Resistance (MOhm)
5@10V
Typical Gate Charge @ Vgs (nC)
345@10V
Typical Gate Charge @ 10V (nC)
345
Typical Input Capacitance @ Vds (pF)
23800@25V
Maximum Power Dissipation (mW)
1250000
Typical Fall Time (ns)
14
Typical Rise Time (ns)
32
Typical Turn-Off Delay Time (ns)
180
Typical Turn-On Delay Time (ns)
36
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
26.3(Max)
Package Width
5.3(Max)
Package Length
20.3(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-264
MSL
-
Qualification
-
Continuous Drain Current Id
240A
Rds On - Drain-Source Resistance
4.1 mOhms
Id - Continuous Drain Current
240 A
Qg - Gate Charge
345 nC
Mounting Styles
通孔
Minimum Operating Temperature
- 55 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Maximum Operating Temperature
+ 150 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
1.25 kW
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vds - Drain-Source Breakdown Voltage
250 V
系列
X3-Class
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
功率耗散
1.25kW
信道型
N