参数名
参数值
参数名
参数值
包装/外壳
SOT-227-4
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
295
Maximum Drain Source Resistance (MOhm)
5.5@10V
Typical Gate Charge @ Vgs (nC)
279@10V
Typical Gate Charge @ 10V (nC)
279
Typical Input Capacitance @ Vds (pF)
23000@25V
Maximum Power Dissipation (mW)
1070000
Typical Fall Time (ns)
25
Typical Rise Time (ns)
35
Typical Turn-Off Delay Time (ns)
56
Typical Turn-On Delay Time (ns)
36
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Screw
Package Height
9.6(Max)
Package Width
25.42(Max)
Package Length
38.23(Max)
PCB changed
4
Standard Package Name
SOT
Supplier Package
SOT-227B
Lead Shape
Screw
Typical Turn-On Delay Time
36 ns
Pd - Power Dissipation
1.07 kW
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
螺钉安装
Rds On - Drain-Source Resistance
5.5 mOhms
Typical Turn-Off Delay Time
56 ns
系列
IXFN300N10
零件状态
活跃
类型
Polar Power MOSFET HiPerFET
子类别
Discrete Semiconductor Modules
技术
Si
引脚数量
4
配置
单双源
上升时间
35 ns
产品类别
Discrete Semiconductor Modules
信道型
N
产品
功率MOSFET模块