Littelfuse IXFN64N50PD3

包装/外壳

SOT-227B-4

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (MOhm)

85@10V

Typical Gate Charge @ Vgs (nC)

150@10V

Typical Gate Charge @ 10V (nC)

150

Typical Input Capacitance @ Vds (pF)

9700@25V

Maximum Power Dissipation (mW)

625000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

85

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Supplier Package

SOT-227B

Typical Turn-On Delay Time

30 ns

Pd - Power Dissipation

625 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

底座安装

Rds On - Drain-Source Resistance

85 mOhms

Typical Turn-Off Delay Time

85 ns

零件状态

Obsolete

子类别

Discrete Semiconductor Modules

技术

Si

配置

Single

上升时间

25 ns

产品类别

Discrete Semiconductor Modules

信道型

N