参数名
参数值
参数名
参数值
包装/外壳
TO-220-3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
36
Maximum Drain Source Resistance (MOhm)
45@10V
Typical Gate Charge @ Vgs (nC)
21@10V
Typical Gate Charge @ 10V (nC)
21
Typical Input Capacitance @ Vds (pF)
1425@25V
Maximum Power Dissipation (mW)
36000
Typical Fall Time (ns)
20
Typical Rise Time (ns)
30
Typical Turn-Off Delay Time (ns)
54
Typical Turn-On Delay Time (ns)
19
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
16.07(Max)
Package Width
4.9(Max)
Package Length
10.36(Max)
PCB changed
3
Tab
Tab
Supplier Package
OVERMOLDED TO-220
Qualification
-
Continuous Drain Current Id
36A
Vds - Drain-Source Breakdown Voltage
200 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
36 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
21 nC
Rds On - Drain-Source Resistance
45 mOhms
Id - Continuous Drain Current
36 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
功率耗散
36W
信道型
N