Littelfuse IXFP3N120

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3

Maximum Drain Source Resistance (MOhm)

4500@10V

Typical Gate Charge @ Vgs (nC)

39@10V

Typical Gate Charge @ 10V (nC)

39

Typical Input Capacitance @ Vds (pF)

1050@25V

Maximum Power Dissipation (mW)

200000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

零件状态

活跃

引脚数量

3

配置

Single

信道型

N