Littelfuse IXFT140N20X3HV

包装/外壳

TO-268HV-3

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

140

Maximum Drain Source Resistance (MOhm)

9.6@10V

Typical Gate Charge @ Vgs (nC)

127@10V

Typical Gate Charge @ 10V (nC)

127

Typical Input Capacitance @ Vds (pF)

7660@25V

Maximum Power Dissipation (mW)

480000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

130

Typical Turn-On Delay Time (ns)

28

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268HV

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

127 nC

Rds On - Drain-Source Resistance

9.6 mOhms

Id - Continuous Drain Current

140 A

Transistor Polarity

N-Channel

Pd - Power Dissipation

480 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vds - Drain-Source Breakdown Voltage

200 V

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N