Littelfuse IXFX120N65X2

包装/外壳

TO-247-3

EU RoHS

符合免除

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

120

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

24@10V

Typical Gate Charge @ Vgs (nC)

240@10V

Typical Gate Charge @ 10V (nC)

240

Typical Input Capacitance @ Vds (pF)

14000@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

82

Typical Turn-On Delay Time (ns)

39

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 247

MSL

-

Qualification

-

Continuous Drain Current Id

120A

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

1.25 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

225 nC

Rds On - Drain-Source Resistance

24 mOhms

Id - Continuous Drain Current

120 A

系列

650V Ultra Junction X2

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

1.25kW

信道型

N