Littelfuse IXTA140N055T2

包装/外壳

TO-263-3

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

140

Maximum Drain Source Resistance (mOhm)

5.4@10V

Typical Gate Charge @ Vgs (nC)

82@10V

Typical Gate Charge @ 10V (nC)

82

Typical Input Capacitance @ Vds (pF)

4760@25V

Maximum Power Dissipation (mW)

180000

Typical Fall Time (ns)

17

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

21

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.29(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-263AA

Vds - Drain-Source Breakdown Voltage

55 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

180 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

82 nC

Rds On - Drain-Source Resistance

5.4 mOhms

Id - Continuous Drain Current

140 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N