参数名
参数值
参数名
参数值
包装/外壳
TO-263-3
EU RoHS
Compliant
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
300
Maximum Drain Source Resistance (MOhm)
2.5@10V
Typical Gate Charge @ Vgs (nC)
145@10V
Typical Gate Charge @ 10V (nC)
145
Typical Input Capacitance @ Vds (pF)
10700@25V
Maximum Power Dissipation (mW)
480000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
17
Typical Turn-Off Delay Time (ns)
32
Typical Turn-On Delay Time (ns)
22
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
表面贴装
Package Height
4.83(Max)
Package Width
9.65(Max)
Package Length
10.29(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-263AA
Id - Continuous Drain Current
300 A
Rds On - Drain-Source Resistance
2.5 mOhms
Mounting Styles
SMD/SMT
Minimum Operating Temperature
- 55 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
480 W
Vds - Drain-Source Breakdown Voltage
40 V
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N