参数名
参数值
参数名
参数值
包装/外壳
TO-263-3
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
TrenchP
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
150
Maximum Gate Source Voltage (V)
±15
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
44
Maximum Drain Source Resistance (MOhm)
65@10V
Typical Gate Charge @ Vgs (nC)
175@10V
Typical Gate Charge @ 10V (nC)
175
Typical Input Capacitance @ Vds (pF)
13400@25V
Maximum Power Dissipation (mW)
298000
Typical Fall Time (ns)
17
Typical Rise Time (ns)
42
Typical Turn-Off Delay Time (ns)
50
Typical Turn-On Delay Time (ns)
25
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
4.83(Max)
Package Width
9.65(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Supplier Package
D2PAK
Vds - Drain-Source Breakdown Voltage
150 V
Pd - Power Dissipation
298 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 15 V, + 15 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Rds On - Drain-Source Resistance
65 mOhms
Id - Continuous Drain Current
44 A
系列
IXTA44P15
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
P