Littelfuse IXTF02N450

包装/外壳

ISOPLUS-i4-PAK-3

材料

Si

Supplier Package

ISOPLUS I4-PAK

Tab

Tab

PCB changed

3

Package Length

20.29(Max)

Package Width

5.21(Max)

Package Height

21.34(Max)

Mounting

通孔

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

17

Typical Turn-Off Delay Time (ns)

28

Typical Rise Time (ns)

48

Typical Fall Time (ns)

143

Maximum Power Dissipation (mW)

78000

Typical Input Capacitance @ Vds (pF)

256@25V

Typical Gate Charge @ 10V (nC)

10.4

Typical Gate Charge @ Vgs (nC)

10.4@10V

Maximum Drain Source Resistance (MOhm)

625000@10V

Maximum IDSS (uA)

10

Maximum Gate Source Leakage Current (nA)

100

Maximum Continuous Drain Current (A)

0.2

Maximum Gate Threshold Voltage (V)

6.5

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

4500

Number of Elements per Chip

1

Channel Mode

Enhancement

Category

功率MOSFET

PPAP

无

Automotive

无

EU RoHS

Compliant

MSL

-

Qualification

-

Continuous Drain Current Id

200mA

Id - Continuous Drain Current

200 mA

Rds On - Drain-Source Resistance

625 Ohms

Qg - Gate Charge

10.6 nC

Mounting Styles

通孔

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

78 W

Vgs th - Gate-Source Threshold Voltage

4 V

Vds - Drain-Source Breakdown Voltage

4.5 kV

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

78W

信道型

N