Littelfuse IXTJ6N150

包装/外壳

TO-247-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

3

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

3850@10V

Typical Gate Charge @ Vgs (nC)

67@10V

Typical Gate Charge @ 10V (nC)

67

Typical Input Capacitance @ Vds (pF)

2230@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

38

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

50

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247 ISO

Vds - Drain-Source Breakdown Voltage

1.5 kV

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

67 nC

Rds On - Drain-Source Resistance

3.85 Ohms

Id - Continuous Drain Current

3 A

系列

IXTJ6N150

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N