Littelfuse IXTK210P10T

包装/外壳

TO-264-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

210

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

7.5@10V

Typical Gate Charge @ Vgs (nC)

740@10V

Typical Gate Charge @ 10V (nC)

740

Typical Input Capacitance @ Vds (pF)

69500@25V

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

55

Typical Rise Time (ns)

98

Typical Turn-Off Delay Time (ns)

165

Typical Turn-On Delay Time (ns)

90

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264AA

MSL

-

Qualification

-

Continuous Drain Current Id

210A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

1.04 kW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

740 nC

Rds On - Drain-Source Resistance

7.5 mOhms

Id - Continuous Drain Current

210 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

1.04kW

信道型

P