Littelfuse IXTN120P20T

包装/外壳

SOT-227-4

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

106

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

30@10V

Typical Gate Charge @ Vgs (nC)

740@10V

Typical Gate Charge @ 10V (nC)

740

Typical Input Capacitance @ Vds (pF)

73000@25V

Maximum Power Dissipation (mW)

830000

Typical Fall Time (ns)

50

Typical Rise Time (ns)

85

Typical Turn-Off Delay Time (ns)

200

Typical Turn-On Delay Time (ns)

90

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Continuous Drain Current

106(A)

Drain-Source On-Volt

200(V)

Operating Temperature Classification

Military

Package Type

SOT-227B

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±15(V)

Number of Elements

1

Rad Hardened

无

Vr - Reverse Voltage

100 V

Pd - Power Dissipation

830 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

底座安装

Rds On - Drain-Source Resistance

30 mOhms

系列

IXTN120P20

零件状态

活跃

类型

功率MOSFET

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

4

极性

P

配置

单双源

功率耗散

830(W)

产品类别

Discrete Semiconductor Modules

信道型

P

产品

功率MOSFET模块