参数名
参数值
参数名
参数值
包装/外壳
SOT-227B
EU RoHS
符合免除
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
90
Maximum Drain Source Resistance (MOhm)
44@10V
Typical Gate Charge @ Vgs (nC)
205@10V
Typical Gate Charge @ 10V (nC)
205
Typical Input Capacitance @ Vds (pF)
12000@25V
Maximum Power Dissipation (mW)
890000
Typical Fall Time (ns)
28
Typical Rise Time (ns)
60
Typical Turn-Off Delay Time (ns)
89
Typical Turn-On Delay Time (ns)
32
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Screw
Package Width
25.42(Max)
Package Length
38.23(Max)
PCB changed
4
Supplier Package
SOT-227B
Vr - Reverse Voltage
100 V
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
底座安装
零件状态
活跃
类型
Polar Power MOSFET
子类别
Discrete Semiconductor Modules
技术
Si
引脚数量
4
配置
单双源
产品类别
Discrete Semiconductor Modules
信道型
P
产品
功率MOSFET模块