Littelfuse IXTP56N15T

包装/外壳

TO-220-3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

56

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

36@10V

Typical Gate Charge @ Vgs (nC)

34@10V

Typical Gate Charge @ 10V (nC)

34

Typical Input Capacitance @ Vds (pF)

2250@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

17

Typical Turn-Off Delay Time (ns)

43

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220

Vds - Drain-Source Breakdown Voltage

150 V

Mounting Styles

通孔

Rds On - Drain-Source Resistance

36 mOhms

Id - Continuous Drain Current

56 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

N